Integrated circuit layout and method of configuring the same

ABSTRACT

An integrated circuit includes at least one first active region, at least one second active region adjacent to the first active region, and a plurality of third active regions. The first active region and the second active region are staggered. The third active regions are present adjacent to the first active region, wherein the third active regions are substantially aligned with each other.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation.

The smaller feature size is the use of multigate devices such as finfield effect transistor (FinFET) devices. FinFETs are so called becausea gate is present on and around a “fin” that extends from the substrate.FinFET devices may allow for shrinking the gate width of device whileproviding a gate on the sides and/or top of the fin including thechannel region.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic diagram of an inverter according some embodimentsof the disclosure.

FIG. 2A is a top view of a cell layout according to some embodiments ofthe disclosure.

FIG. 2B is top view of an integrated circuit layout using the cell ofFIG. 2A according to some embodiments of the disclosure.

FIG. 3 and FIG. 4 are top views of cell layouts according to someembodiments of the disclosure.

FIG. 5A is a top view of a cell layout according to some embodiments ofthe disclosure.

FIG. 5B is top view of an integrated circuit layout using the cell ofFIG. 5A according to some embodiments of the disclosure.

FIG. 6 to FIG. 9 are top views of cell layouts according to differentembodiments of the disclosure.

FIG. 10 to FIG. 13 are top views of integrated circuit layouts accordingto different embodiments of the disclosure.

FIG. 14A is a top view of a cell layout according to some embodiments ofthe disclosure.

FIG. 14B is top view of an integrated circuit layout using the cell ofFIG. 14A according to some embodiments of the disclosure.

FIG. 15 and FIG. 16 are top views of cell layouts according to someembodiments of the disclosure.

FIG. 17A is a top view of a cell layout according to some embodiments ofthe disclosure.

FIG. 17B is top view of an integrated circuit layout using the cell ofFIG. 17A according to some embodiments of the disclosure.

FIG. 18 and FIG. 19 are top views of cell layouts according to someembodiments of the disclosure.

FIG. 20 is a top view of an integrated circuit layout according someembodiments of the disclosure.

FIG. 21 is a flowchart of a method of configuring an integrated circuitlayout according to some embodiments of the disclosure.

FIG. 22 is a processing system to generate one or more of the abovedescribed layout embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare present in direct contact, and may also include embodiments in whichadditional features may be present between the first and secondfeatures, such that the first and second features may not be in directcontact. In addition, the present disclosure may repeat referencenumerals and/or letters in the various examples. This repetition is forthe purpose of simplicity and clarity and does not in itself dictate arelationship between the various embodiments and/or configurationsdiscussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 250degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly.

Reference is made to FIG. 1, which is a schematic diagram of an inverter100 according to some embodiments of the present disclosure. Theinverter 100 includes a PMOS (P-channel metal oxide semiconductor)transistor 110 and an NMOS (N-channel metal oxide semiconductor)transistor 120. An input port 130 of the inverter 100 is electricallyconnected to gate terminals of the PMOS transistor 110 and the NMOStransistor 120. An output port 140 of the inverter 100 is electricallyconnected to drain terminals of the PMOS transistor 110 and the NMOStransistor 120.

When the input port 130 is set to “0” (for example, ground voltage), thePMOS transistor 110 is turned on, and the NMOS transistor 120 is turnedoff. In such a situation, current flows from VDD (voltage drain drain)through the PMOS transistor 110 to the output port 140. When the inputport 130 is set to “1” (for example, operation voltage), the PMOStransistor 110 is turned off, and the NMOS transistor 120 is turned on.In such a situation, current flows from the output port 140 through theNMOS transistor 120 to VSS (voltage source source).

Reference is made to FIG. 2A, which is a top view of a cell layoutaccording to some embodiments of the present disclosure. The cell 200 ispresent on a semiconductor substrate. The cell 200 has a cell boundaryincluding a top edge 312, a bottom edge 314, and opposite side edges 316and 318. A cell height is defined between the top edge 312 and thebottom edge 314. A cell width is defined between the opposite side edges316 and 318.

The cell 200 includes a first transistor region 212 and a secondtransistor region 214, in which the second transistor region 214 isarranged vertically next to the first transistor region 212. A commonboundary line 315 separates the first transistor region 212 and thesecond transistor region 214. The first transistor region 212 of thecell 200 can be arranged to form PMOS transistors and can be regarded asa PMOS region 212. The second transistor region 214 of the cell 200 canbe arranged to form NMOS transistors and can be regarded as an NMOSregion 214.

A plurality of P-type active regions 220 a-220 d are present in the PMOSregion 212, and a plurality of N-type active regions 224 a-224 d arepresent in the NMOS region 214. In some embodiments, an active region,such as the P-type active regions 220 a-220 d and the N-type activeregions 224 a-224 d, is also referred to herein as OD (oxide-dimensionedregion). The P-type active regions 220 a-220 d are substantiallyperpendicular to the top edge 312. The P-type active regions 220 a-220 dare arranged substantially parallel to each other and are substantiallyequally spaced apart. The N-type active regions 224 a-224 d aresubstantially perpendicular to the bottom edge 314. The N-type activeregions 224 a-224 d are arranged substantially parallel to each otherand are substantially equally spaced apart. In some embodiments, theP-type active regions 220 a-220 d and the N-type active regions 224a-224 d are fin shaped, and the P-type active regions 220 a-220 d andthe N-type active regions 224 a-224 d are staggered in a one-by-oneconfiguration, in which each of the active regions, such as the P-typeactive regions 220 a-220 d and the N-type active regions 224 a-224 d, isstaggered with the active region or regions adjacent thereto.

Gate electrodes 230 a-230 d and dummy gate electrodes 240 a-240 c arepresent over the semiconductor substrate. In FIG. 2A, the gateelectrodes 230 a-230 d and the dummy gate electrodes 240 a-240 c aresubstantially parallel to each other and are substantially parallel tothe top edge 312 and the bottom edge 314. The gate electrodes 230 a-230d and the dummy gate electrodes 240 a-240 c are formed of polysilicon orother conductive materials, such as metals, metal alloys and metalsilicides. The dummy gate electrodes 240 a-240 c are arranged to not actas a gate to any transistor. In some embodiments, gate electrodes anddummy gate electrodes, such as the gate electrodes 230 a-230 d and thedummy gate electrodes 240 a-240 c, are also referred to herein as PO. Insome embodiments, the dummy gate electrodes 240 a-240 c are alsoreferred to herein as PODE (poly on OD edge). In some embodiments, theactive regions 220 a-220 d and 224 a-224 d are fin type in shape and,together with the corresponding gate electrodes 230 a-230 d, formrespective FinFET transistors.

The gate electrodes 230 a and 230 b are present in the PMOS region 212.The gate electrodes 230 c and 230 d are present in the NMOS region 214.The cell 200 further includes a plurality of cutting patterns 250 a-250d, such as cut polysilicon (CPO) patterns, for respectively separatingthe gate electrodes 230 a-230 d. The cutting patterns 250 a-250 drespectively represent cut sections or patterning areas where the gateelectrodes 230 a-230 d are removed.

The cutting pattern 250 a separates the gate electrode 230 a into twoparts. One part of the gate electrode 230 a crosses the P-type activeregions 220 a and 220 c and is partially present on an edge of theP-type active region 220 b, in which said part of the gate electrode 230a is regarded as a dummy gate electrode to the P-type active region 220b. The other part of the gate electrode 230 a is partially present on anedge of the P-type active region 220 d and is regarded as a dummy gateelectrode to the P-type active region 220 d.

The cutting pattern 250 b separates the gate electrode 230 b into twoparts. One part of the gate electrode 230 b crosses the P-type activeregions 220 b and 220 d and is partially present on an edge of theP-type active region 220 c, in which said part of the gate electrode 230b is regarded as a dummy gate electrode to the P-type active region 220c. The other part of the gate electrode 230 b is partially present on anedge of the P-type active region 220 a and is regarded as a dummy gateelectrode to the P-type active region 220 a.

The cutting pattern 250 c separates the gate electrode 230 c into twoparts. One part of the gate electrode 230 c crosses the N-type activeregions 224 a and 224 c and is partially present on an edge of theN-type active region 224 b, in which said part of the gate electrode 230c is regarded as a dummy gate electrode to the N-type active region 224b. The other part of the gate electrode 230 c is partially present on anedge of the N-type active region 224 d and is regarded as a dummy gateelectrode to the N-type active region 224 d.

The cutting pattern 250 d separates the gate electrode 230 d into twoparts. One part of the gate electrode 230 d crosses the N-type activeregions 224 b and 224 d and is partially present on an edge of theN-type active region 224 c, in which said part of the gate electrode 230d is regarded as a dummy gate electrode to the N-type active region 224c. The other part of the gate electrode 230 d is partially present on anedge of the N-type active region 224 a and is regarded as a dummy gateelectrode to the N-type active region 224 a.

In some embodiments, the dummy gate electrode 240 a is present on thetop edge 312, the dummy gate electrode 240 b is present on the commonboundary line 315, and the dummy gate electrode 240 c is present on thebottom edge 314. The gate electrodes 230 a and 230 b are present betweenthe dummy gate electrodes 240 a and 240 b, in which the gate electrode230 a is present between the dummy gate electrode 240 a and the gateelectrode 230 b, and the gate electrode 230 b is present between thegate electrode 230 a and the dummy gate electrode 240 b. The gateelectrodes 230 c and 230 d are present between the dummy gate electrodes240 b and 240 c, in which the gate electrode 230 c is present betweenthe dummy gate electrode 240 b and the gate electrode 230 d, and thegate electrode 230 d is present between the gate electrode 230 c and thedummy gate electrode 240 c.

In some embodiments, the P-type active regions 220 a-220 d are staggeredin the PMOS region 212, and the N-type active regions 224 a-224 d arestaggered in the NMOS region 214. As shown in FIG. 2A, the P-type activeregions 220 a and 220 c are partially covered by the dummy gateelectrode 240 a while being spaced from the dummy gate electrode 240 b.The P-type active regions 220 b and 220 d are partially covered by thedummy gate electrode 240 b while being spaced from the dummy gateelectrode 240 a. The N-type active regions 224 a and 224 c are partiallycovered by the dummy gate electrode 240 b while being spaced from thedummy gate electrode 240 c. The N-type active regions 224 b and 224 dare partially covered by the dummy gate electrode 240 c while beingspaced from the dummy gate electrode 240 b.

Reference is made to FIG. 2B, which is a top view of an integratedcircuit layout using the cell 200 of FIG. 2A according to someembodiments of the present disclosure. In some embodiments, the cell 200is arranged to form two inverters. One of the inverters includes theP-type active regions 220 a and 220 c, the N-type active regions 224 aand 224 c, and the gate electrodes 230 a and 230 c, and the otherinverter includes the P-type active regions 220 b and 220 d, the N-typeactive regions 224 b and 224 d, and the gate electrodes 230 b and 230 d.

In some embodiments, the P-type active regions 220 a-220 d and thecorresponding N-type active regions 224 a-224 d are respectivelyinterconnected through conductive metal one lines 280 a and conductivevia zeros 290 a. For example, the P-type active region 220 d isconnected to the N-type active region 224 d through the conductive metalone line 280 a and the conductive via zeros 290 a. Output ports of theinverters are respectively on or electrically connected to theconductive metal one lines 280 a. For simplicity, only one conductivemetal one line 280 a and two conductive via zeros 290 a are labelled.

A VDD power supply line 260 and a VSS ground line 270 are implemented,for example, in metal two lines. In a top-down sequence, the VDD powersupply line 260 is connected through conductive via ones 292 a,conductive metal one lines 280 b, and conductive via zeros 290 b to eachof source regions of the P-type active regions 220 a-220 d. Forsimplicity, only one conductive metal one line 280 b, one conductive viaone 292 a, and one conductive via zero 290 b are labelled.

Similarly, the VSS ground line 270 is connected through conductive viaones 292 b, conductive metal one lines 280 c, and conductive via zeros290 c to each of source regions of the N-type active regions 224 a-224d. For simplicity, only one conductive metal one line 280 c, oneconductive via one 292 b, and one conductive via zero 290 c arelabelled.

Furthermore, the gate electrodes 230 a and 230 b in the PMOS region 212are respectively connected to the gate electrodes 230 c and 230 d in theNMOS region 214 through conductive metal one lines 280 d and conductivevia zeros 290 d. For example, the gate electrode 230 a is connected tothe gate electrode 230 c through the conductive metal one line 280 d andthe conductive via zeros 290 d. Input ports of the inverters arerespectively on or electrically connected to the conductive metal onelines 280 d. For simplicity, only one conductive metal one line 280 dand two conductive via zeros 290 d are labelled.

FIG. 3 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 3 and FIG. 2Aincludes the arrangement of the P-type active regions 220 a-220 d, theN-type active regions 224 a-224 d, and the cutting patterns 250 a-250 d.Referring to FIG. 3, the P-type active regions 220 b and 220 d arepartially covered by the dummy gate electrode 240 a while being spacedfrom the dummy gate electrode 240 b. The P-type active regions 220 a and220 c are partially covered by the dummy gate electrode 240 b whilebeing spaced from the dummy gate electrode 240 a. The N-type activeregions 224 b and 224 d are partially covered by the dummy gateelectrode 240 b while being spaced from the dummy gate electrode 240 c.The N-type active regions 224 a and 224 c are partially covered by thedummy gate electrode 240 c while being spaced from the dummy gateelectrode 240 b. The positions of the cutting patterns 250 a-250 d maybe adjusted accordingly. For example, the cutting pattern 250 a forseparating the gate electrode 230 a is present between the P-type activeregions 220 a and 220 b; the cutting pattern 250 b for separating thegate electrode 230 b is present between the P-type active regions 220 cand 220 d; the cutting pattern 250 c for separating the gate electrode230 c is present between the N-type active regions 224 a and 224 b; andthe cutting pattern 250 d for separating the gate electrode 230 d ispresent between the N-type active regions 224 c and 224 d.

Similarly, the interconnection among the P-type active regions 220 a-220d, the N-type active regions 224 a-224 d, and the gate electrodes 230a-230 d may be similar to that shown in FIG. 2B and therefore is notrepeated here to avoid duplicity.

FIG. 4 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 4 and FIG. 2Aincludes the arrangement of the P-type active regions 220 a-220 d, theN-type active regions 224 a-224 d, the gate electrodes 230 a-230 d, andthe cutting patterns 250 a-250 d. In FIG. 4, the edge of each of theP-type active regions 220 a and 220 c distal to the dummy gate electrode240 a is not covered by the gate electrode 230 b; the edge of each ofthe P-type active regions 220 b and 220 d distal to the dummy gateelectrode 240 b is not covered by the gate electrode 230 a; the edge ofeach of the N-type active regions 224 a and 224 c distal to the dummygate electrode 240 b is not covered by the gate electrode 230 d; and theedge of each of the N-type active regions 224 b and 224 d distal to thedummy gate electrode 240 c is not covered by the gate electrode 230 c.That is, the cell layout of FIG. 4 represents a non-PODE configuration,in which each of the gate electrodes 230 a-230 d has no portion arrangedto act as a PODE structure. In some embodiments, each or at least one ofthe cutting patterns 250 a-250 d in the non-PODE configuration may besubstantially aligned with at least one of the active regions 220 a-220d and 224 a-224 d. For example, the cutting pattern 250 a may besubstantially aligned with the P-type active region 220 d; the cuttingpattern 250 b may be substantially aligned with the P-type active region220 a; the cutting pattern 250 c may be substantially aligned with theN-type active region 224 d; and the cutting pattern 250 d may besubstantially aligned with the N-type active region 224 a. In somealternative embodiments, the cutting patterns 250 a-250 d in thenon-PODE configuration may be similar to that shown in FIG. 2A as well,in which each or at least one of the cutting patterns 250 a-250 d ispresent between adjacent two of the active regions 220 a-220 d and 224a-224 d.

The interconnection among the P-type active regions 220 a-220 d, theN-type active regions 224 a-224 d, and the gate electrodes 230 a-230 dmay be similar to that shown in FIG. 2B and therefore is not repeatedhere to avoid duplicity.

FIG. 5A is a top view of a cell layout according to some embodiments ofthe present disclosure. Unlike the cells 200 having the active regions220 a-220 d and 224 a-224 d staggered in the one-by-one configurationshown in FIGS. 2A, 3 and 4, the active regions 420 a-420 d and 424 a-424d of the cell 400 are staggered in groups, in which the active regions420 a-420 d and 424 a-424 d of each group are substantially aligned witheach other, and the active regions 420 a-420 d and 424 a-424 d ofadjacent groups are not aligned. Referring to FIG. 5A, the P-type activeregions 420 a and 420 b are partially covered by the dummy gateelectrode 440 a while being spaced from the dummy gate electrode 440 b.The P-type active regions 420 c and 420 d are partially covered by thedummy gate electrode 440 b while being spaced from the dummy gateelectrode 440 a. The N-type active regions 424 a and 424 b are partiallycovered by the dummy gate electrode 440 b while being spaced from thedummy gate electrode 440 c. The N-type active regions 424 c and 424 dare partially covered by the dummy gate electrode 440 c while beingspaced from the dummy gate electrode 440 b.

The gate electrode 430 a is separated by the cutting pattern 450 a intotwo parts. One part of the gate electrode 430 a crosses the P-typeactive regions 420 a and 420 b. The other part of the gate electrode 430a is partially present on edges of the P-type active regions 420 c and420 d and is regarded as a dummy gate electrode to the P-type activeregions 420 c and 420 d. The gate electrode 430 b is separated by thecutting pattern 450 b into two parts. One part of the gate electrode 430b crosses the P-type active regions 420 c and 420 d. The other part ofthe gate electrode 430 b is partially present on edges of the P-typeactive regions 420 a and 420 b and is regarded as a dummy gate electrodeto the P-type active regions 420 a and 420 b. The gate electrode 430 cis separated by the cutting pattern 450 c into two parts. One part ofthe gate electrode 430 c crosses the N-type active regions 424 a and 424b. The other part of the gate electrode 430 c is partially present onedges of the N-type active regions 424 c and 424 d and is regarded as adummy gate electrode to the N-type active regions 424 c and 424 d. Thegate electrode 430 d is separated by the cutting pattern 450 d into twoparts. One part of the gate electrode 430 d crosses the N-type activeregions 424 c and 424 d. The other part of the gate electrode 430 d ispartially present on edges of the N-type active regions 424 a and 424 band is regarded as a dummy gate electrode to the N-type active regions424 a and 424 b.

Reference is made to FIG. 5B, which is a top view of an integratedcircuit layout using the cell 400 of FIG. 5A according to someembodiments of the present disclosure. In some embodiments, the cell 400is arranged to form two inverters. One of the inverters includes theP-type active regions 420 a and 420 b, the N-type active regions 424 aand 424 b, and the gate electrodes 430 a and 430 c, and the otherinverter includes the P-type active regions 420 c and 420 d, the N-typeactive regions 424 c and 424 d, and the gate electrodes 430 b and 430 d.

In some embodiments, the P-type active regions 420 a-420 d and thecorresponding N-type active regions 424 a-424 d are respectivelyinterconnected through conductive metal one lines 480 a and conductivevia zeros 490 a. For example, the P-type active region 420 a isconnected to the N-type active region 424 a through the conductive metalone line 480 a and the conductive via zeros 490 a. Output ports of theinverters are respectively on or electrically connected to theconductive metal one lines 480 a. For simplicity, only one conductivemetal one line 480 a and two conductive via zeros 490 a are labelled.

A VDD power supply line 460 and a VSS ground line 470 are implemented,for example, in metal two lines. In a top-down sequence, the VDD powersupply line 460 is connected through conductive via ones 492 a,conductive metal one lines 480 b, and conductive via zeros 490 b to eachof source regions of the P-type active regions 420 a-420 d. Forsimplicity, only one conductive metal one line 480 b, one conductive viaone 492 a, and one conductive via zero 490 b are labelled.

The VSS ground line 470 is connected through conductive via ones 492 b,conductive metal one lines 480 c, and conductive via zeros 490 c to eachof source regions of the N-type active regions 424 a-424 d. Forsimplicity, only one conductive metal one line 480 c, one conductive viaone 492 b, and one conductive via zero 490 c are labelled.

Furthermore, the gate electrodes 430 a and 430 b are respectivelyconnected to the gate electrodes 430 c and 430 d through conductivemetal one lines 480 d and conductive via zeros 490 d. For example, thegate electrode 430 a is connected to the gate electrode 430 c throughthe conductive metal one line 480 d and the conductive via zeros 490 d.Input ports of the inverters are respectively on or electricallyconnected to the conductive metal one lines 480 d. For simplicity, onlyone conductive metal one line 480 d and two conductive via zeros 490 dare labelled.

FIG. 6 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 6 and FIG. 5Aincludes the arrangement of the P-type active regions 420 a-420 d andthe N-type active regions 424 a-424 d. The P-type active regions 420 aand 420 b are partially covered by the dummy gate electrode 440 b whilebeing spaced from the dummy gate electrode 440 a. The P-type activeregions 420 c and 420 d are partially covered by the dummy gateelectrode 440 a while being spaced from the dummy gate electrode 440 b.The N-type active regions 424 a and 424 b are partially covered by thedummy gate electrode 440 c while being spaced from the dummy gateelectrode 440 b. The N-type active regions 424 c and 424 d are partiallycovered by the dummy gate electrode 440 b while being spaced from thedummy gate electrode 440 c.

Similarly, the interconnection among the P-type active regions 420 a-420d, the N-type active regions 424 a-424 d, and the gate electrodes 430a-430 d may be similar to that shown in FIG. 5B and therefore is notrepeated here to avoid duplicity.

FIG. 7 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 7 and FIG. 5Aincludes the arrangement of the P-type active regions 420 a-420 d, theN-type active regions 424 a-424 d, the gate electrodes 430 a-430 d, andthe cutting patterns 450 a-450 d. In FIG. 7, the edge of each of theP-type active regions 420 a and 420 b distal to the dummy gate electrode440 a is not covered by the gate electrode 430 b; the edge of each ofthe P-type active regions 420 c and 420 d distal to the dummy gateelectrode 440 b is not covered by the gate electrode 430 a; the edge ofeach of the N-type active regions 424 a and 424 b distal to the dummygate electrode 440 b is not covered by the gate electrode 430 d; and theedge of each of the N-type active regions 424 c and 424 d distal to thedummy gate electrode 440 c is not covered by the gate electrode 430 c.That is, the cell layout of FIG. 7 represents a non-PODE configuration,in which each of the gate electrodes 430 a-430 d has no portion arrangedto act as a PODE structure. In some embodiments, each or at least one ofthe cutting patterns 450 a-450 d in the non-PODE configuration may besubstantially aligned with at least one of the active regions 420 a-420d and 424 a-424 d. For example, the cutting pattern 450 a may besubstantially aligned with the P-type active region 420 c; the cuttingpattern 450 b may be substantially aligned with the P-type active region420 b; the cutting pattern 450 c may be substantially aligned with theN-type active region 424 c; and the cutting pattern 450 d may besubstantially aligned with the N-type active region 424 b. In somealternative embodiments, the cutting patterns 450 a-450 d in thenon-PODE configuration may be similar to that shown in FIG. 5A as well,in which each or at least one of the cutting patterns 450 a-450 d ispresent between adjacent two of the active regions 420 a-420 d and 424a-424 d.

The interconnection among the P-type active regions 420 a-420 d, theN-type active regions 424 a-424 d, and the gate electrodes 430 a-430 dmay be similar to that shown in FIG. 5B and therefore is not repeatedhere to avoid duplicity.

In some embodiments, as shown in FIG. 8, the cell 400 has eight P-typeactive regions 420 and eight N-type active regions 424. The P-typeactive regions 420 are divided into two groups 420L and 420R. The P-typeactive regions 420 in the same group 420L or 420R are substantiallyaligned with each other, while the groups 420L and 420R are staggered.The P-type active regions 420 in the group 420L are closer to the topedge 312, and the P-type active regions 420 in the group 420R are closerto the common boundary line 315. Similarly, the N-type active regions424 are divided into two groups 424L and 424R as well. The N-type activeregions 424 in the same group 424L or 424R are substantially alignedwith each other, while the groups 424L and 424R are staggered. TheN-type active regions 424 in the group 424L are closer to the commonboundary line 315, and the N-type active regions 424 in the group 420Rare closer to the bottom edge 314.

In some embodiments, as shown in FIG. 8, each of the cutting patterns450 a-450 d may be present between adjacent two of the active regions420 and 424. On the other hand, in a non-PODE configuration, in whicheach of the gate electrodes 430 a-430 d has no portion arranged to actas a PODE structure, as shown in FIG. 9, each of the cutting patterns450 a-450 d may be substantially aligned with at least one of the activeregions 420 and 424. In some alternative embodiments, the cuttingpatterns 450 a-450 d in the non-PODE configuration may be similar tothat shown in FIG. 8 as well, in which each or at least one of thecutting patterns 450 a-450 d are present between adjacent two of theactive regions 420 and 424.

The interconnection among the P-type active regions 420, the N-typeactive regions 424, and the gate electrodes 430 a-430 d may be similarto that shown in FIG. 5B and therefore is not repeated here to avoidduplicity.

Reference is made to FIG. 10, which is a top view of an integratedcircuit layout according to some embodiments of the present disclosure.The layout 600 includes at least one first cell 610 and at least onesecond cell 620. The first cell 610 is a cell having active regionsstaggered in a one-by-one configuration, such as but not limited to thecells 200 shown in FIGS. 2A, 3 and 4. The second cell 620 is a cellhaving active regions staggered in groups, such as but not limited tothe cells 400 shown in FIGS. 5A, and 6-9.

The cell heights of the first cell 610 and the second cell 620 aresubstantially the same, which enables the first cell 610 and the secondcell 620 to be placed in a row. The first cell 610 has high devicedensity since the devices of the first cell 610 can be more staggered,and the first cell 610 can be small in size. On the other hand, thedevices of the second cell 620 can be used to build a complicatedcircuit. Furthermore, the devices of the second cell 620 have less or noPODE structure on their gate electrodes, and thus the devices of thesecond cell 620 will have high device performance and low powerconsumption. For example, as shown in FIG. 6, a part of the gateelectrode 430 a that crosses the P-type active regions 420 c and 420 dhas no portion arranged to act as a PODE structure, and thus the deviceperformance and the power consumption of the FinFET formed by the P-typeactive regions 420 c and 420 d and the gate electrode 430 a will not beaffected by the PODE structure. As shown in FIG. 10, by abutting thefirst cell 610 and the second cell 620 in the row, the designer willhave the freedom to design the arrangement of devices.

In some embodiments, at least one of gate electrodes 616 a-616 d of thefirst cell 610 and at least one of gate electrodes 626 a-626 d of thesecond cell 620 are physically connected to each other. As shown in FIG.10, the gate electrode 616 a of the first cell 610 is physicallyconnected to the gate electrode 626 a of the second cell 620; the gateelectrode 616 b of the first cell 610 is physically connected to thegate electrode 626 b of the second cell 620; the gate electrode 616 c ofthe first cell 610 is physically connected to the gate electrode 626 cof the second cell 620; and the gate electrode 616 d of the first cell610 is physically connected to the gate electrode 626 d of the secondcell 620.

Furthermore, dummy gate electrodes 614 a-614 c of the first cell 610 anddummy gate electrodes 624 a-624 c of the second cell 620 extendsubstantially along a longitudinal direction of the row. When the firstcell 610 and the second cell 620 are abutted in the row, the dummy gateelectrodes 614 a-614 c of the first cell 610 and the dummy gateelectrodes 624 a-624 c of the second cell 620 at the same horizontallevel are physically connected to each other. For example, the dummygate electrode 614 a of the first cell 610 and the dummy gate electrode624 a of the second cell 620 are physically connected to each other; thedummy gate electrode 614 b of the first cell 610 and the dummy gateelectrode 624 b of the second cell 620 are physically connected to eachother; and the dummy gate electrode 614 c of the first cell 610 and thedummy gate electrode 624 c of the second cell 620 are physicallyconnected to each other.

Since the dummy gate electrodes 614 a-614 c of the first cell 610 andthe dummy gate electrodes 624 a-624 c of the second cell 620 areconductive, the continuous dummy gate electrodes 614 a-614 c and 624a-624 c can be utilized for interconnecting the first cell 610 and thesecond cell 620. That is, some signals may travel through the dummy gateelectrodes 614 a-614 c and 624 a-624 c rather than through a metal oneline or a metal two line. Therefore, an amount of metal one lines and/ormetal two lines for interconnecting the first cell 610 and the secondcell 620 can be reduced.

FIG. 11 to FIG. 13 are top views of integrated circuit layouts accordingto some embodiments of the present disclosure. The numbers, arrangement,and types of the first cell 610 and the second cell 620 may varyaccording to circuit design. As shown in FIG. 11, a first cell 610 issandwiched between two second cells 620, and the second cells 620 aredifferent from each other. As shown in FIG. 12, the first cells 610 andthe second cells 620 are alternatingly arranged. As shown in FIG. 13, asecond cell 620 is sandwiched between two first cells 610.

In some embodiments, the P-type active regions and the N-type activeregions may be horizontally arranged in the cell. Reference is made toFIG. 14A. The cell 700 includes a plurality of P-type active regions 710a and 710 b, a plurality of N-type active regions 720 a and 720 b, aplurality of gate electrodes 730 a and 730 b, and a plurality of dummygate electrodes 740 a and 740 b.

The dummy gate electrodes 740 a and 740 b are respectively present onthe top edge and the bottom edge of the cell 700. The gate electrodes730 a and 730 b are present between the dummy gate electrodes 740 a and740 b.

In some embodiments, the P-type active regions 710 a and 710 b and theN-type active regions 720 a and 720 b are staggered in the cell 700. Forexample, the P-type active region 710 a and the N-type active region 720a are partially covered by the dummy gate electrode 740 a while beingspaced from the dummy gate electrode 740 b. The P-type active region 710b and the N-type active region 720 b are partially covered by the dummygate electrode 740 b while being spaced from the dummy gate electrode740 a. The P-type active region 710 b is present between the P-typeactive region 710 a and the N-type active region 720 a, and the N-typeactive region 720 a is present between the P-type active regions 710 band the N-type active region 720 b.

The cell 700 further includes a plurality of cutting patterns 750 a and750 b respectively for separating the gate electrodes 730 a and 730 b.In some embodiments, the gate electrode 730 a is separated by thecutting pattern 750 a into two parts. One part of the gate electrode 730a crosses the P-type active region 710 a and the N-type active region720 a and is partially present on an edge of the P-type active region710 b, in which said part of the gate electrode 730 a is regarded as adummy gate electrode to the P-type active region 710 b. The other partof the gate electrode 730 a is partially present on an edge of theN-type active region 720 b and is regarded as a dummy gate electrode tothe N-type active region 720 b. The gate electrode 730 b is separated bythe cutting pattern 750 b into two parts. One part of the gate electrode730 b crosses the P-type active region 710 b and the N-type activeregion 720 b and is partially present on an edge of the N-type activeregion 720 a, in which said part of the gate electrode 730 b is regardedas a dummy gate electrode to the N-type active region 720 a. The otherpart of the gate electrode 730 b is partially present on an edge of theP-type active region 710 a and is regarded as a dummy gate electrode tothe P-type active region 710 a.

Reference is made to FIG. 14B, which is a top view of an integratedcircuit layout using the cell 700 of FIG. 14A according to someembodiments of the present disclosure. In some embodiments, the cell 700is arranged to form two inverters. One of the inverters includes theP-type active region 710 a, the N-type active region 720 a, and the gateelectrode 730 a, and the other inverter includes the P-type activeregion 710 b, the N-type active region 720 b, and the gate electrode 730b.

A VDD power supply line 760 and a VSS ground line 770 are implemented,for example, in metal one lines. The VDD power supply line 760 isconnected through conductive via zeros 790 a to each of source regionsof the P-type active regions 710 a and 710 b. Similarly, the VSS groundline 770 is connected through conductive via zeros 790 b to each ofsource regions of the N-type active regions 720 a and 720 b.

In some embodiments, drain regions of the P-type active region 710 a andthe N-type active region 720 a are interconnected through a localconductive metal segment 780 c. Similarly, drain regions of the P-typeactive regions 710 b and the N-type active region 720 b areinterconnected through a local conductive metal segment 780 d. Outputports of the inverters are respectively on or electrically connected tothe local conductive metal segments 780 c and 780 d. Input ports of theinverters are respectively on or electrically connected to a part of thegate electrode 730 a that crosses the P-type active region 710 a and theN-type active region 720 a and a part of the gate electrode 730 b thatcrosses the P-type active region 710 b and the N-type active region 720b.

FIG. 15 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 15 and FIG. 14Aincludes the arrangement of the P-type active regions 710 a and 710 b,the N-type active regions 720 a and 720 b, and the cutting patterns 750a and 750 b. Referring to FIG. 15, the P-type active region 710 a andthe N-type active region 720 a are partially covered by the dummy gateelectrode 740 b while being spaced from the dummy gate electrode 740 a.The P-type active region 710 b and the N-type active region 720 b arepartially covered by the dummy gate electrode 740 a while being spacedfrom the dummy gate electrode 740 b. The cutting pattern 750 a forseparating the gate electrode 730 a is present between the P-type activeregions 710 a and 710 b. The cutting pattern 750 b for separating thegate electrode 730 b is present between the N-type active regions 720 aand 720 b.

The interconnection among the P-type active regions 710 a and 710 b, theN-type active regions 720 a and 720 b, and the gate electrodes 730 a and730 b may be similar to that shown in FIG. 14B and therefore is notrepeated here to avoid duplicity.

FIG. 16 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 16 and FIG. 14Aincludes the arrangement of the P-type active regions 710 a and 710 b,the N-type active regions 720 a and 720 b, the gate electrodes 730 a-730b and the cutting patterns 750 a and 750 d. Referring to FIG. 16, theedge of each of the P-type active region 710 a and the N-type activeregion 720 a distal to the dummy gate electrode 740 a is not covered bythe gate electrode 730 b, and the edge of each of the P-type activeregion 710 b and the N-type active region 720 b distal to the dummy gateelectrode 740 b is not covered by the gate electrode 730 a. That is, thecell layout of FIG. 16 represents a non-PODE configuration, in whicheach of the gate electrodes 730 a and 730 b has no portion arranged toact as a PODE structure. In some embodiments, each or at least one ofthe cutting patterns 750 a and 750 b in the non-PODE configuration maybe substantially aligned with at least one of the active regions 710a-710 b and 720 a-720 b. For example, the cutting pattern 750 a may besubstantially aligned with the N-type active region 720 b, and thecutting pattern 750 b may be substantially aligned with the P-typeactive region 710 a. In some alternative embodiments, the cuttingpatterns 750 a and 750 b in the non-PODE configuration may be similar tothat shown in FIG. 14A as well, in which each or at least one of thecutting patterns 750 a and 750 b is present between adjacent two of theactive regions 710 a-710 b and 720 a-720 b.

The interconnection among the P-type active regions 710 a and 710 b, theN-type active regions 720 a and 720 b, and the gate electrodes 730 a and730 b may be similar to that shown in FIG. 14B and therefore is notrepeated here to avoid duplicity.

Reference is made to FIG. 17A. Unlike the cells 700 having the activeregions 710 a-710 b and 720 a-720 b staggered in the one-by-oneconfiguration shown in FIGS. 14A, 15 and 16, the active regions 810a-810 b and 820 a-820 b of the cell 800 are staggered in groups, inwhich the active regions 810 a-810 b and 820 a-820 b of each group aresubstantially aligned with each other, and the active regions 810 a-810b and 820 a-820 b of adjacent groups are not aligned. Referring to FIG.17A, the P-type active region 810 a and the N-type active region 820 aare partially covered by the dummy gate electrode 840 a while beingspaced from the dummy gate electrode 840 b. The P-type active region 810b and the N-type active region 820 b are partially covered by the dummygate electrode 840 b while being spaced from the dummy gate electrode840 a.

The gate electrode 830 a is separated by the cutting pattern 850 a intotwo parts. One part of the gate electrode 830 a crosses the P-typeactive region 810 a and the N-type active region 820 a. The other partof the gate electrode 830 a is partially present on edges of the P-typeactive region 810 b and the N-type active region 820 b and is regardedas a dummy gate electrode to the P-type active region 810 b and theN-type active region 820 b. The gate electrode 830 b is separated by thecutting pattern 850 b into two parts. One part of the gate electrode 830b crosses the P-type active region 810 b and the N-type active region820 b. The other part of the gate electrode 830 b is partially presenton edges of the P-type active region 810 a and the N-type active region820 a and is regarded as a dummy gate electrode to the P-type activeregion 810 a and the N-type active region 820 a.

Reference is made to FIG. 17B, which is a top view of an integratedcircuit layout using the cell 800 of FIG. 17A according to someembodiments of the present disclosure. In some embodiments, the cell 800is arranged to form two inverters. One of the inverters includes theP-type active region 810 a, the N-type active region 820 a, and the gateelectrode 830 a, and the other inverter includes the P-type activeregion 810 b, the N-type active region 820 b, and the gate electrode 830b.

A VDD power supply line 860 and a VSS ground line 870 are implemented,for example, in metal one lines. The VDD power supply line 860 isconnected through conductive via zeros 890 a to each of source regionsof the P-type active regions 810 a and 810 b. Similarly, the VSS groundline 870 is connected through conductive via zeros 890 b to each ofsource regions of the N-type active regions 820 a and 820 b.

In some embodiments, drain regions of the P-type active region 810 a andthe N-type active region 820 a are interconnected through a localconductive metal segment 880 c. Similarly, drain regions of the P-typeactive region 810 b and the N-type active region 820 b areinterconnected through a local conductive metal segment 880 d. Outputports of the inverters are respectively on or electrically connected tothe local conductive metal segments 880 c and 880 d. Input ports of theinverters are respectively on or electrically connected to a part of thegate electrode 830 a that crosses the P-type active region 810 a and theN-type active region 820 a and a part of the gate electrode 830 b thatcrosses the P-type active region 810 b and the N-type active region 820b.

FIG. 18 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 18 and FIG. 17Aincludes the arrangement of the P-type active regions 810 a and 810 band the N-type active regions 820 a and 820 b. Referring to FIG. 18, theP-type active region 810 a and the N-type active region 820 a arepartially covered by the dummy gate electrode 840 b while being spacedfrom the dummy gate electrode 840 a. The P-type active region 810 b andthe N-type active region 820 b are partially covered by the dummy gateelectrode 840 a while being spaced from the dummy gate electrode 840 b.

Similarly, the interconnection among the P-type active regions 810 a and810 b, the N-type active regions 820 a and 820 b, and the gateelectrodes 830 a and 830 b may be similar to that shown in FIG. 17B andtherefore is not repeated here to avoid duplicity.

FIG. 19 is a top view of a cell layout according to some embodiments ofthe present disclosure. The difference between FIG. 19 and FIG. 17Aincludes the arrangement of the P-type active regions 810 a and 810 b,the N-type active regions 820 a and 820 b, the gate electrodes 830 a and830 b and the cutting patterns 850 a and 850 b. Referring to FIG. 19,the edge of each of the P-type active region 810 a and the N-type activeregion 820 a distal to the dummy gate electrode 840 a is not covered bythe gate electrode 830 b, and the edge of each of the P-type activeregion 810 b and the N-type active region 820 b distal to the dummy gateelectrode 840 b is not covered by the gate electrode 830 a. That is, thecell layout of FIG. 19 represents a non-PODE configuration, in whicheach of the gate electrodes 830 a and 830 b has no portion arranged toact as a PODE structure. In some embodiments, each or at least one ofthe cutting patterns 850 a and 850 b in the non-PODE configuration maybe substantially aligned with at least one of the active regions 810a-810 b and 820 a-820 b. For example, the cutting pattern 850 a may besubstantially aligned with the P-type active region 810 b, and thecutting pattern 850 b may be substantially aligned with the N-typeactive region 820 a. In some alternative embodiments, the cuttingpatterns 850 a and 850 b in the non-PODE configuration may be similar tothat shown in FIG. 17A as well, in which each or at least one of thecutting patterns 850 a and 850 b is present between adjacent two of theactive regions 810 a-810 b and 820 a-820 b.

The interconnection among the P-type active regions 810 a and 810 b, theN-type active regions 820 a and 820 b, and the gate electrodes 830 a and830 b may be similar to that shown in FIG. 17B and therefore is notrepeated here to avoid duplicity.

Reference is made to FIG. 20. The cell 700 and the cell 800 can beabutted in a row, in which the cell 700 is a cell having active regionsstaggered in a one-by-one configuration, such as but not limited to thecells 700 shown in FIGS. 14A, 15 and 16, and the cell 800 is a cellhaving active regions staggered in groups, such as but not limited tothe cells 400 shown in FIGS. 17A, 18, and 19.

The cell heights of the cell 700 and the cell 800 are substantially thesame, which enables the cell 700 and the cell 800 to be placed in a row.The cell 700 has high device density since the devices of the cell 700can be more staggered, and the cell 700 can be small in size. On theother hand, the devices of the cell 800 can be used to build acomplicated circuit and will have high device performance and low powerconsumption since the devices of the cell 800 have less or no PODEstructure on their gate electrodes. As shown in FIG. 20, by abutting thecell 700 and the cell 800 in the row, the designer will have the freedomto design the arrangement of devices. Furthermore, at least one of thedummy gate electrodes of the cell 700 and at least one of the dummy gateelectrodes of the cell 800 are physically connected, thus the conductiveand continuous dummy gate electrodes can be utilized for interconnectingthe cell 700 and the cell 800.

Reference is made to FIG. 21, which is a flowchart of a method ofconfiguring an integrated circuit layout according to some embodimentsof the present disclosure. In the design of an integrated circuit,various cells having predetermined functions are used, and the layoutsof cells are stored in, for example, at least one cell library. Themethod begins at operation 910, in which at least one first cell havingactive regions staggered in a one-by-one configuration, such as but notlimited to the cells shown in FIGS. 2A, 3, 4, 14A, 15 and 16, and atleast one second cell having active regions staggered in groups, such asbut not limited to the cells shown in FIGS. 5A, 6-9, 17A, 18, and 19,are obtained from the cell library. The method goes to operation 920, inwhich the first cell and the second cell are placed into one or moredesired locations on an integrated circuit layout and are abutted in atleast one row.

FIG. 22 illustrates a processing system 1000 wherein the above describedmethod may be implemented in order to generate one or more of the abovedescribed layout embodiments. The processing system 1000 includes aprocessor 1002, which may include a central processing unit, aninput/output circuitry, a signal processing circuitry, and a volatileand/or a non-volatile memory. The processor 1002 receives input, such asuser input, from an input device 1004. The input device 1004 may includeone or more of a keyboard, a mouse, a tablet, a contact sensitivesurface, a stylus, a microphone, and the like. The processor 1002 mayalso receive input, such as standard cell layouts, cell libraries,models, and the like, from a non-transitory machine readable storagemedium 1008. The non-transitory machine readable storage medium 1008 maybe located locally to the processor 1002, or may be remote from theprocessor 1002, in which communications between the processor 1002 andthe non-transitory machine readable storage medium 1008 occur over anetwork, such as a telephone network, the Internet, a local areanetwork, a wide area network, or the like. The non-transitory machinereadable storage medium 1008 may include one or more of a hard disk,magnetic storage, optical storage, non-volatile memory storage, and thelike. Included in the non-transitory machine readable storage medium1008 may be database software for organizing data and instructionsstored on the non-transitory machine readable storage medium 1008. Theprocessing system 1000 may include an output device 1006, such as one ormore of a display device, speaker, and the like, for outputtinginformation to a user. As described above, the processor 1002 generatesa layout for an integrated circuit. The layout may be stored in thenon-transitory machine readable storage medium 1008. One or moreintegrated circuit manufacturing machines, such as a photomask generator1010, may communicate with the non-transitory machine readable storagemedium 1008, either locally or over a network, either directly or via anintermediate processor, such as the processor 1002. In some embodiments,the photomask generator 1010 generates one or more photomasks to be usedin the manufacture of an integrated circuit, in conformance with alayout stored in the non-transitory machine readable storage medium1008.

By abutting a first cell having active regions staggered in a one-by-oneconfiguration and a second cell having active regions staggered ingroups in a row, the designer will have the freedom to dispose differentdevices adjacent to each other. Therefore, the devices with varioussizes, performances, channel widths, or the like may be put together tobuild an integrated circuit.

According to some embodiments of the disclosure, an integrated circuitincludes at least one first active region, at least one second activeregion adjacent to the first active region, and a plurality of thirdactive regions. The first active region and the second active region arestaggered. The third active regions are present adjacent to the firstactive region, wherein the third active regions are substantiallyaligned with each other.

According to some embodiments of the disclosure, an integrated circuitincludes a first cell and a second cell. The first cell includes a firstactive region, a first gate electrode crossing the first active region,a second active region adjacent to the first active region, and a secondgate electrode crossing the second active region. The second cellincludes a plurality of third active regions adjacent to each other, anda third gate electrode crossing the third active regions, in which thefirst cell and the second cell abut each other.

According to some embodiments of the disclosure, a method of configuringan integrated circuit layout using a processor includes using theprocessor to generate a first cell and a second cell, in which the firstcell includes at least one first active region and at least one secondactive region arranged therein, and the second cell includes a pluralityof third active regions substantially aligned with each other. The firstactive region and the second active region are adjacent to each otherbut are not aligned. The processor abuts the first cell and the secondcell on the integrated circuit layout. A set of instructions aregenerated for manufacturing an integrated circuit based upon theintegrated circuit layout, and the set of instructions are stored in annon-transitory machine readable storage medium.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit comprising: at least onefirst active region; at least one second active region adjacent to thefirst active region, wherein the first active region and the secondactive region are staggered; and a plurality of third active regionsadjacent to the first active region, wherein the third active regionsare substantially aligned with each other.
 2. The integrated circuit ofclaim 1, further comprising: at least one fourth active region, whereinthe second active region is present between the fourth active region andthe first active region, and the fourth active region and the firstactive region are substantially aligned with each other.
 3. Theintegrated circuit of claim 2, further comprising: at least one fifthactive region, wherein the fourth active region is present between thefifth active region and the second active region, and the fifth activeregion and the second active region are substantially aligned with eachother.
 4. The integrated circuit of claim 3, further comprising: atleast one gate electrode crossing the second active region and the fifthactive region.
 5. The integrated circuit of claim 4, wherein the gateelectrode is partially present on an edge of the fourth active region.6. The integrated circuit of claim 2, further comprising: at least onegate electrode crossing the first active region and the fourth activeregion.
 7. The integrated circuit of claim 6, wherein the gate electrodeis partially present on an edge of the second active region.
 8. Anintegrated circuit comprising: a first cell comprising: a first activeregion; a first gate electrode crossing the first active region; asecond active region adjacent to the first active region; and a secondgate electrode crossing the second active region; and a second cellcomprising: a plurality of third active regions adjacent to each other;and a third gate electrode crossing the third active regions, whereinthe first cell and the second cell abut each other.
 9. The integratedcircuit of claim 8, wherein the first active region and the secondactive region are staggered.
 10. The integrated circuit of claim 8,wherein the first gate electrode is partially present on an edge of thesecond active region.
 11. The integrated circuit of claim 8, wherein thesecond cell comprises: a plurality of fourth active regions adjacent toeach other; and a fourth gate electrode crossing the fourth activeregions.
 12. The integrated circuit of claim 11, wherein the thirdactive regions and the fourth active regions are arranged in a staggeredconfiguration.
 13. The integrated circuit of claim 8, wherein the thirdactive regions are substantially aligned with each other.
 14. Theintegrated circuit of claim 8, further comprising: at least one dummygate electrode is partially present on an edge of the first activeregion and an edge of at least one of the third active regions.
 15. Theintegrated circuit of claim 14, wherein the dummy gate electrode iscontinuous at least between the first active region and said at leastone of the third active regions.
 16. The integrated circuit of claim 14,wherein the dummy gate electrode is conductive.
 17. The integratedcircuit of claim 14, wherein the first gate electrode and the secondgate electrode are separated from each other.
 18. A method ofconfiguring an integrated circuit layout using a processor, the methodcomprising: using the processor, generating a first cell comprising atleast one first active region and at least one second active regionarranged therein, wherein the first active region and the second activeregion are adjacent to each other but are not aligned, and a second cellcomprising a plurality of third active regions substantially alignedwith each other; using the processor, abutting the first cell and thesecond cell on the integrated circuit layout; generating a set ofinstructions for manufacturing an integrated circuit based upon theintegrated circuit layout; and storing the set of instructions in annon-transitory machine readable storage medium.
 19. The method of claim18, wherein the generating the first cell further generates a first gateelectrode crossing the first active region and a second gate electrodecrossing the second active region.
 20. The method of claim 18, whereinthe generating the second cell further generates a third gate electrodecrossing the third active regions.